System for Ultrahigh Density Storage Supporting. Information. and James M. Tour,ǁ, *

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1 Three-Dimensional Networked Nanoporous Ta 2 O 5-x Memory System for Ultrahigh Density Storage Supporting Information Gunuk Wang,, Jae-Hwang Lee, Yang Yang, Gedeng Ruan, Nam Dong Kim, Yongsung Ji, and James M. Tour,ǁ, * Department of Chemistry, ǁ Department of Materials Science and NanoEngineering, The Richard E. Smalley Institute of Nanoscale Science & Technology, Rice University 6100 Main Street, Houston, Texas 77005, USA. KU-KIST Graduate School of Converging Science & Technology. Korea University, 145, Anam-ro, Seongbuk-gu, Seoul , Republic of Korea. Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USA. * tour@rice.edu 1. The oxygen ratio of Ta 2 O 5-x (Figure S1). 2. Readout margin of a NP Ta 2 O 5-x memory device (Figure S2). 3. Switching properties of a NP Ta 2 O 5-x memory device with various set voltages (Figure S3). 4. The I-V plot of a NP Ta 2 O 5-x memory device (Figure S4). 5. Summary of the resistances and the readout margin for various integration architectures (Table S1). 6. Supporting Movie M1 and Supporting Movie M2 S1

2 1. The oxygen ratio of Ta 2 O 5-x Figure S1. The plot of the x of the NP Ta 2 O 5-x film as a function of its depth, which can be estimated from Ta and O atomic concentrations. S2

3 2. Modelling: Readout margin of a NP Ta 2 O 5-x memory device Figure S2. Calculated readout margin V/V pu as a function word/bit lines for a NP Ta 2 O 5-x memory device under V r /3 scheme. All resistance values are calculated from the linear fit of the I-V data (Figure 2a). We assumed a worst-case scenario, the one bit-line pull-up (One BLPU). S3

4 3. Switching properties of a NP Ta 2 O 5-x memory device with various set voltages Figure S3. (a) The representative I-V characteristics of the NP Ta 2 O 5-x device with different set voltages (8 and 14 V). (b) The ON/OFF ratio and ON power as a function of different set voltages. S4

5 4. The I-V plot of a NP Ta 2 O 5-x memory device Figure S4. The I-V characteristic of the NP Ta 2 O 5-x device with highest non-linearity. The nonlinearity is ~ S5

6 5. Summary of the resistances and the readout margin for various integration architectures Table S1. Summary of switching parameters for various integration architectures such as 1D-1R, 1S-1R, CRS, and selector-less memory. The resistances for ON, OFF, and sneak and the maximum readout margin for each architecture are summarized. 6. Supporting Movie M1 and Supporting Movie M2 S6

7 Focused ion beam (FIB) tomography was performed by milling out the junction with slice thicknesses of 30 to 50 nm and taking cross-sectional SEM images at every milling step; Supporting Movie M1 is a sequence of the images. Supporting Movie M2 is a rotating 3D reconstructed topology of NP Ta 2 O 5-x junction structure, by the cross-sectional SEM images. References 1. Kim, G. H.; Lee, J. H.; Ahn, Y.; Jeon, W.; Song, S. J.; Seok, J. Y.; Yoon, J. H.; Yoon, K. J.; Park, T. J.; Hwang, C. S. Adv. Funct. Mater. 2013, 23, Wang, G.; Lauchner, A. C.; Lin, J.; Natelson, D.; Palem, K. V.; Tour, J. M. Adv. Mater. 2013, 25, Lee, M. J.; Seo, S.; Kim, D. C.; Ahn, S. E.; Seo, D. H.; Yoo, I. K.; Baek, I. G.; Kim, D. S.; Byun, I. S.; Kim, S. H.; Hwang, I. R.; Kim, J. S.; Jeon, S. H.; Park, B. H. Adv. Mater. 2007, 19, Seo, J. W.; Baik, S. J.; Kang, S. J.; Hong, Y. H.; Yang, J. H.; Lim, K. S. Appl. Phys. Lett. 2011, 98, Liu, Z.-J.; Gan, J.-Y.; Yew, T.-R. Appl. Phys. Lett. 2012, 100, Jiun-Jia, H.; Tuo-Hung, H.; Chung-Wei, H.; Yi-Ming, T.; Wen-Hsiung, C.; Wen-Yueh, J.; Chen-Hsi, L. Jpn. J. Appl. Phys. 2012, 51, 04DD Li, Y.; Lv, H.; Liu, Q.; Long, S.; Wang, M.; Xie, H.; Zhang, K.; Huo, Z.; Liu, M. Nanoscale 2013, 5, Ji, Y.; Zeigler, D. F.; Lee, D. S.; Choi, H.; Jen, A. K. Y.; Ko, H. C.; Kim, T.-W. Nat. Commun. 2013, 4:2707 doi: /ncomms Lee, M.-J.; Kim, S. I.; Lee, C. B.; Yin, H.; Ahn, S.-E.; Kang, B. S.; Kim, K. H.; Park, J. S7

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